Samsung is already carrying out the research needed to create a NAND memory with more than 500 layers.

Samsung plans in 2020 to start mass production and supply of 128-layer TLC NAND flash memory crystals with a density of 256 and 512 Gbit, which will use the sixth generation V-NAND technology. These crystals will support data rates up to 1200 Mbps.

The South Korean manufacturer has already begun the research needed to release V-NAND memory with more than 500 layers.

In addition to the SSD for cloud servers SS17 PM1733 with PCIe Gen4 interface, showing sequential read speeds of 6400 MB / s and sequential write speeds of 3800 MB / s, Samsung introduced a model of 30.72 TB, to increase reliability equipped with a dual controller. In addition, PM1735 Series SSDs will be available in U.2 and HHHL form factors. Samsung is also continuing to develop hot-swappable SAS SSDs. The dual-port PM1653 (SAS4) model delivers sequential read speeds of up to 4000 MB / s and sequential write speeds of up to 3800 MB / s.